DMN3010LSS
Suggested Pad Layout
X
Dimensions
Z
C
Value (in mm)
5.1
1.27
Z
X
Y
0.41
1.0
C
Y
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN3010LSS
Document number: DS31259 Rev. 6 - 2
5 of 5
www.diodes.com
November 2008
? Diodes Incorporated
相关PDF资料
DMN3018SSS-13 MOSFET N CH 30V 7.3A SO-8
DMN3024LK3-13 MOSFET N-CH 30V 9.78A DPAK
DMN3024LSD-13 MOSFET 2N-CH 30V 5.7A SO8
DMN3024LSS-13 MOSFET N-CH 30V 6.4A SO8
DMN3024SFG-7 MOSFET N-CH 30V 7.5A PWRDI3333-8
DMN3029LFG-7 MOSFET N-CH 30V 5.3A PWRDI333-8
DMN3030LSS-13 MOSFET N-CH 30V 9A 8-SOIC
DMN3031LSS-13 MOSFET N-CH 30V 9A 8SOP
相关代理商/技术参数
DMN3018SSD-13 功能描述:MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3018SSS-13 功能描述:MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3020LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3020LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3024LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3024LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3024LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3024LSD-13 功能描述:MOSFET ENHANCE MODE MOSFET 30V DUAL N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube